Central Semiconductor 2N4287 TIN/LEAD BJTs - バイポーラトランジスタ NPN 45Vcbo 45Vceo 7.0Vebo 1.0pF 5.0dB

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 600 at 5 V, 1 mA

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 45 V

DC Collector/Base Gain hfe Min: 150 at 5 V, 1 mA

Collector-Emitter Saturation Voltage: 350 mV