Central Semiconductor 2N5058 PBFREE BJTs - バイポーラトランジスタ 小信号トランジスタ

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 300 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 1 V