Central Semiconductor 2N5227 PBFREE BJTs - バイポーラトランジスタ PNP 30Vcbo 30Vceo 3.0Vebo 10mA 10pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 700 at 10 V, 2 mA

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

DC Collector/Base Gain hfe Min: 50 at 10 V, 2 mA

Collector-Emitter Saturation Voltage: 400 mV