Central Semiconductor 2N5301 PBFREE BJTs - バイポーラトランジスタ NPN ハイパワーアンプ

Unit Weight: 6.401 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 200 W

Gain Bandwidth Product fT: 4 MHz

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 30 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 4 V