Central Semiconductor 2N5366 PBFREE BJTs - バイポーラトランジスタ PNP スイッチアンプ

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V