Central Semiconductor 2N5415 PBFREE BJTs - バイポーラトランジスタ PNP 高電圧

Unit Weight: 2.033 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 15 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 2.5 V