Central Semiconductor 2N5680 PBFREE BJTs - バイポーラトランジスタ PNP 増幅/スイッチ

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 2 V