Central Semiconductor 2N5681 PBFREE BJTs - バイポーラトランジスタ NPN 増幅/スイッチ

Technology: Si

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150 at 250 mA, 2 V

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 250 mA, 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 2 V