Central Semiconductor 2N5785 PBFREE BJTs - バイポーラトランジスタ NPN スイッチ SS

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 100 at 1.6 A, 2 V

Gain Bandwidth Product fT: 1 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 65 V

Maximum DC Collector Current: 3.5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 1.6 A, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1 V