Central Semiconductor 2N6099 PBFREE BJTs - バイポーラトランジスタ NPN 汎用パワー

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 70 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 2.5 V