Central Semiconductor 2N6373 TIN/LEAD BJTs - バイポーラトランジスタ 70Vcbo 70Vcev 65Vcer 60Vceo 40W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 100 at 2.5 A, 4 V

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Continuous Collector Current: 6 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 2.5 A, 4 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1 V