Central Semiconductor 2N657A PBFREE BJTs - バイポーラトランジスタ 小信号トランジスタ 汎用

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 250 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 2 V