Central Semiconductor 2N914 PBFREE BJTs - バイポーラトランジスタ NPN 高速スイッチ SS

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 700 mV