Central Semiconductor 2N930B PBFREE BJTs - バイポーラトランジスタ NPN Gen Pur SS

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 45 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV