Central Semiconductor BC182 PBFREE BJTs - バイポーラトランジスタ NPN 低ノイズ 50Vceo 60Vcbo 100mA

Technology: Si

Unit Weight: 217 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 600 mV