Central Semiconductor BCX23 TIN/LEAD BJTs - バイポーラトランジスタ PNP 増幅/スイッチ 125Vcbo 125Vceo 5.0

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 125 V

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 125 V

Collector-Emitter Saturation Voltage: 900 mV