Central Semiconductor BSY79 TIN/LEAD BJTs - バイポーラトランジスタ NPN 増幅/スイッチ 120Vcbo 5.0Vebo

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

DC Collector/Base Gain hfe Min: 30

Collector-Emitter Saturation Voltage: 500 mV