Central Semiconductor CMPT2222AE TR PBFREE BJTs - バイポーラトランジスタ NPN エンハンスド

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 920 mV