Central Semiconductor MPSA75 TIN/LEAD ダーリントントランジスタ PNP 40Vcbo 40Vceo 10Vebo 100mA 4.0pF

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10000 at 5 V, 100 mA

Collector- Emitter Voltage VCEO Max: 40 V