CML Micro MWT-PH9F RF MOSFETトランジスタ 狭帯域および広帯域 高効率アンプおよび発振器用途

Gain: 13 dB

Technology: GaAs

Output Power: 28 dBm

Transistor Type: pHEMT

Operating Frequency: 26 GHz

Id - Continuous Drain Current: 180 mA to 220 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 7.5 V