Comchip Technology MMBTA44-G BJTs - バイポーラトランジスタ NPN トランジスタ 200mA 400V

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 400 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 750 mV