Diodes Incorporated DMN2015UFDE-7 MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

Fall Time: 10.9 ns

Rise Time: 16.8 ns

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 45.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 660 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7.4 ns

Typical Turn-Off Delay Time: 43.6 ns

Id - Continuous Drain Current: 10.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9.3 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV