Diodes Incorporated DMT6030LFDF-7 MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K

Fall Time: 3.4 ns

Rise Time: 2.2 ns

Technology: Si

Unit Weight: 65 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 9.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 860 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.6 ns

Typical Turn-Off Delay Time: 10.7 ns

Id - Continuous Drain Current: 6.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 25.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V