Diodes Incorporated DXTC3C100PD-13 BJTs - バイポーラトランジスタ SS 低飽和トランジスタ PowerDI5060-8/SWP T&R 2.5K

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.47 W

DC Current Gain hFE Max: 40

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 225 mV