Diodes Incorporated DXTN5860DFDB-7 BJTs - バイポーラトランジスタ SS 低飽和トランジスタ

Technology: Si

Unit Weight: 10 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 690 mW

DC Current Gain hFE Max: 430 at 500 mA, 2 V

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 6 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 280 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 230 mV