Diodes Incorporated FMMT549ATA BJTs - バイポーラトランジスタ PNP 中電力

Width: 1.4 mm

Height: 1.1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 70 at 50 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 35 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70 at 50 mA, 2 V, 80 at 1 A, 2 V, 40 at 2 A, 2 V, 150 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 300 mV