Diodes Incorporated ZTX657 BJTs - バイポーラトランジスタ NPN スーパーEライン

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 50 at 100 mA, 5 V

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 100 mA, 5 V, 40 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 500 mV