Diodes Incorporated ZTX788BSTZ BJTs - バイポーラトランジスタ PNP 15V ハイゲイン

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 500 at 10 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500 at 10 mA, 2 V, 400 at 1 A, 2 V, 300 at 2 A, 2 V, 150 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 15 V