Diodes Incorporated ZTX789ASTZ BJTs - バイポーラトランジスタ PNP スーパーEライン

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300 at 10 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 500 mV