Diodes Incorporated ZTX853 BJTs - バイポーラトランジスタ NPN 中電力

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.2 W

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 160 mV