Diodes Incorporated ZXTD6717E6QTA BJTs - バイポーラトランジスタ SS 低飽和トランジスタ

Technology: Si

Unit Weight: 15 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.7 W

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 1.5 A, 1.25 A

Maximum DC Collector Current: 5 A, 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 16.5 mV