Diodes Incorporated ZXTN07045EFFTA BJTs - バイポーラトランジスタ NPN 45V ハイゲイン

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 36 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 190 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 45 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500 at 100 mA, 2 V, 400 at 1 A, 2 V, 250 at 2 A, 2 V, 70 at 4 A, 2 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 230 mV