Diodes Incorporated ZXTP2027FTA BJTs - バイポーラトランジスタ PNP 60V トランジスタ

Width: 1.4 mm

Height: 1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.56 W

DC Current Gain hFE Max: 300 at - 2 A, - 2 V

Gain Bandwidth Product fT: 165 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20 at - 10 A, - 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 155 mV