Diodes Incorporated ZXTP25020DZTA BJTs - バイポーラトランジスタ PNP 20V ハイゲイン

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 4.46 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 290 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 25 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 200 at 1 A, 2 V, 45 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 195 mV