Diotec Semiconductor BC847BP BJTs - バイポーラトランジスタ BJT, DFN1006-3, 45V, 100mA, NPN

Unit Weight: 11 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 325

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV