Diotec Semiconductor MMBT5551 BJTs - バイポーラトランジスタ BJT, SOT-23, 160V, 600mA, NPN

Unit Weight: 39 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV