Fairchild FQPF6N80T MOSFETs N-CH/800V/6A/QFET

Width: 4.9 mm

Height: 16.07 mm

Length: 10.36 mm

Fall Time: 45 ns

Rise Time: 70 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 31 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 51 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 3.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.3 S

Rds On - Drain-Source Resistance: 1.95 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V