Vishay General Semiconductor ILQ620 トランジスタ出力フォトカプラ フォトトランジスタ出力 クアッド CTR >50%

Width: 6.81 mm

Height: 3.81 mm

Length: 20.07 mm

Fall Time: 11 us

Rise Time: 2.8 us

Output Type: NPN Phototransistor

Unit Weight: 1.100 g

Configuration: 4 Channel

Mounting Style: Through Hole

Isolation Voltage: 5300 Vrms

Number of Channels: 4 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.3 V

Vr - Reverse Voltage: 700 mV

Current Transfer Ratio: 50 %

Pd - Power Dissipation: 500 mW

Maximum Collector Current: 100 mA

Current Transfer Ratio - Max: 600 %

Current Transfer Ratio - Min: 50 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 70 V

Collector-Emitter Breakdown Voltage: 70 V

Maximum Collector Emitter Saturation Voltage: 400 mV