Vishay General Semiconductor IRFBG20PBF MOSFETs 推奨代替品 IRFB

Width: 4.7 mm

Height: 15.49 mm

Length: 10.41 mm

Fall Time: 31 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 38 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 54 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.4 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V