Vishay General Semiconductor SI1050X-T1-GE3 MOSFETs 8V Vds 5V Vgs SC89-6

Fall Time: 6 ns

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 236 mW

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Typical Turn-On Delay Time: 6.8 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 1.34 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.12 S

Rds On - Drain-Source Resistance: 86 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 350 mV