Vishay General Semiconductor SISA24DN-T1-GE3 MOSFETs 25V Vds 60A Id 17.2nC Qg Typ.

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 17 ns

Rise Time: 42 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 1.15 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1 V