Vishay General Semiconductor TCDT1103G トランジスタ出力フォトカプラ フォトトランジスタ出力 単一 CTR>100-200%

Width: 6.4 mm

Height: 4.2 mm

Length: 8.8 mm

Fall Time: 6.7 us

Rise Time: 7 us

Output Type: NPN Phototransistor

Unit Weight: 400 mg

Configuration: 1 Channel

Mounting Style: Through Hole

Isolation Voltage: 5000 Vrms

Number of Channels: 1 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 5 V

Current Transfer Ratio: 100 %

Pd - Power Dissipation: 200 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 200 %

Current Transfer Ratio - Min: 100 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 32 V

Maximum Collector Emitter Saturation Voltage: 300 mV