Vishay General Semiconductor VBPW34S シリコンPINフォトダイオード ガルウィング 430-1100nm +/-65度

Width: 3.9 mm

Height: 1.2 mm

Length: 6.4 mm

Fall Time: 100 ns

Rise Time: 100 ns

Dark Current: 2 nA

Photocurrent: 55 uA

Mounting Style: SMD/SMT

Peak Wavelength: 940 nm

Moisture Sensitive: Yes

If - Forward Current: 50 mA

Vf - Forward Voltage: 1 V

Vr - Reverse Voltage: 60 V

Pd - Power Dissipation: 215 mW

Half Intensity Angle Degrees: 65 deg

Noise Equivalent Power - NEP: 4E-14 W/sqrt Hz

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C