Vishay General Semiconductor VO216AT トランジスタ出力フォトカプラ デュアル チャネル フォトトランジスタ CTR>50%

Fall Time: 2 us

Rise Time: 3 us

Output Type: NPN Phototransistor

Unit Weight: 540 mg

Mounting Style: SMD/SMT

Isolation Voltage: 4000 Vrms

Number of Channels: 1 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 50 %

Pd - Power Dissipation: 240 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 80 %

Current Transfer Ratio - Min: 50 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Maximum Collector Emitter Voltage: 30 V

Maximum Collector Emitter Saturation Voltage: 400 mV