GeneSiC G2R50MT33K SiC MOSFET 3300V 50mΩ TO-247-4 G2R SiC MOSFET

Fall Time: 18 ns

Rise Time: 37 ns

Technology: SiC

Unit Weight: 6.200 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 340 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 536 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 74 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 63 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 3.3 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V