GeneSiC GB02SLT12-220 ショットキーシリコンカーバイドダイオード 1200V 2A SiC ショットキー整流器

Technology: SiC

Unit Weight: 2.300 g

Mounting Style: Through Hole

If - Forward Current: 2 A

Ir - Reverse Current: 8 uA

Vf - Forward Voltage: 1.8 V

Pd - Power Dissipation: 42 W

Ifsm - Forward Surge Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV