GeneSiC GB10SLT12-252 ショットキシリコンカーバイドダイオード 1200V - 10A SiCショットキ整流器

Technology: SiC

Unit Weight: 300 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 10 A

Vf - Forward Voltage: 1.5 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV