Infineon FF225R12ME4PBPSA1 IGBTシリコンモジュール 1200 V、225 A デュアルIGBTモジュール

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 225 A