Infineon FF400R07A01E3S6XKSA2 ハイブリッドIGBTモジュール ハイブリッドパック DSC SI

Technology: Si

Configuration: Half Bridge

Mounting Style: Through Hole

Pd - Power Dissipation: 1.5 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 700 V

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 400 A