Infineon FP25R12W2T4PBPSA1 IGBTシリコンモジュール 1200 V, 25 A PIM IGBTモジュール

Technology: Si

Unit Weight: 39 g

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 25 A